Electron beam induced current (EBIC) is a scanning electron microscope-based semiconductor technique for the characterization of semiconductors and is used to analyze defects and minority carrier properties in semiconductor devices.
This article discusses practical aspects of how to set up an SEM for EBIC, and how to perform EBIC experiments suitable for qualitative or quantitative analysis. Examples from light emitting diode and laser diode devices are shown. Additionally, references to important theoretical EBIC literature are presented for further information.
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