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New ways of exploring the Nano-world
with large area silicon drift detectors
on TEM and STEM
was held on
Wednesday, 7 October 2009
4 pm BST, 5 pm CET, 11 am EST
Register or Login now to view the archived version
Outline:
Find out how to improve data collection times and make fast mapping in TEM and STEM a reality - all without liquid nitrogen.
Silicon drift detectors (SDD) technology has made enormous advances in resolution and stability in a relatively short time. The introduction of large area SDDs has made the collection of data from nanostructures a reality in both conventional analytical TEMs and in STEM mode on SEMs. In addition to the analysis of samples in transmission mode, it is now possible to analyse nanoparticles on solid substrates at low accelerating voltages. The large solid angle of these detectors has the collection efficiency to make these analyses viable.
The application of large area SDD detectors for TEMs has improved solid angle - especially beneficial where counts are low in nanoprobe modes. The SDD detector can 
also handle high count rates, for example when analysing thicker samples with field emission TEMs. All of which improves data collection times and makes faster mapping in TEM a reality. Additionally, large area detectors for low kV STEM now provide a way to analyse nanoparticles in the SEM saving expensive TEM time and maximising productivity.
Speakers:
This online seminar was delivered by experts at Oxford Instruments including Dr Neil Rowlands, EDS Product Manager and Dr Simon Burgess, Marketing Manager. The special guest speaker, Prof Ian Jones from the Department of Metallurgy & Materials at The University of Birmingham has been investigating a wide variety of nanostructures using this new technology.
