FEI has announced a field upgradeable option to add backside circuit edit capabilities to its recently announced V600CE focused ion beam (FIB) system. The available enhancement adds an infra-red camera and bulk silicon trenching capabilities to the highly accurate and automated FIB platform making the V600CE an ideal solution for all circuit edit applications for today’s complex semiconductors.
“With the backside circuit edit option, the V600CE becomes an even more flexible and precise tool for design validation and performance optimization, supporting flip-chip as well as traditionally packaged semiconductor devices,” said John Williams, FEI’s director of semiconductor solutions.
The V600CE was released in June. It features the NanoChemix gas delivery system and end-pointing capabilities to deliver precise, flexible circuit edit for increased success rates on today’s 65 nm and below devices.
FEI featured the V600CE and its entire suite of time- and cost-saving solutions for semiconductor labs at its ISTFA exhibit (Booth 124,) November 6-7 at the San Jose Convention Center.
