InGaN Epilayer with Network of Interlinking InGaN Strips

Atomic Force Microscopy: Temperature-bounced InGaN epilayer showing a network of interlinking InGaN strips, aligned roughly parallel to the [11-20] direction.

Courtesy of Colin J. Humphreys, Rachel A. Oliver and Mark J. Galtrey, Cambridge Centre for Gallium Nitride, Department of Materials Science and Metallurgy, University of Cambridge, UK.