Images

Figure 7:
600 x 600 pixel maps of a 45 nm PMOS transistor structure recorded with 50 μs pixel-1dwell time and 1 nA beam current. Drift correction was applied to acquire multiple frames in 100 minutes. The maps were fully quantified to eliminate contributions from overlapping peaks. Data courtesy of D. Klenov, FEI.

From: Nanoscale Chemical Compositional Analysis with an Innovative S/TEM-EDX System.
Peter Schlossmacher, Dmitri O. Klenov, Bert Freitag, Sebastian von Harrach, and Andy Steinbach, FEI Company, Eindhoven, The Netherlands
Microscopy and Analysis 24(7):S5-S8 (EU), 2010